The first working laser was made by Theodore H. Maiman in 1960 at Hughes Research Laboratories in Malibu, California, beating several research teams including those of Townes at Columbia University, Arthur Schawlow at Bell Labs, and Gould at a company called TRG (Technical Research Group).

Maiman used a solid-state flashlamp-pumped synthetic ruby crystal to produce red laser light at 694 nanometres wavelength. Maiman's laser, however, was only capable of pulsed operation due to its three-level pumping scheme.

Later in 1960 the Iranian physicist Ali Javan, working with William R. Bennett and Donald Herriot, made the first gas laser using helium and neon. Javan later received the Albert Einstein Award in 1993.

The concept of the semiconductor laser diode was proposed by Basov and Javan. The first laser diode was demonstrated by Robert N. Hall in 1962. Hall's device was made of gallium arsenide and emitted at 850 nm in the near-infrared region of the spectrum.

The first semiconductor laser with visible emission was demonstrated later the same year by Nick Holonyak, Jr. As with the first gas lasers, these early semiconductor lasers could be used only in pulsed operation, and indeed only when cooled to liquid nitrogen temperatures (77 K).

In 1970, Zhores Alferov in the Soviet Union and Izuo Hayashi and Morton Panish of Bell Telephone Laboratories independently developed laser diodes continuously operating at room temperature, using the heterojunction structure.